![]() Reduction ratio for h FE between 84 and 98 at the saturated reduction level have been obtained. Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). In the case of an npn transistor, the hFE of the. ![]() ![]() The decrease of the current gain factor h FE for increasing dose was analyzed. The standard thickness of the passivation oxide layer is about ltm (Figure 1 ). Our results from those experiments (unpublished) always. The influence of combined Co-60 gamma radiation total ionization dose (TID) and conducted electromagnetic interference (EMI) in bipolar transistors was studied. The BJTs were set at forward active bias during the entire irradiation processes to investigate the current gain degradation. The experimental results demonstrated that the base current increases under the influence of EMI, TID and combined TID with EMI due to the recombination currents in the emitter-base spacer of the transistor. The ideality factor n investigated showed that TID was approximately equal to 2 and the combination of TID and EMI was greater than 2. Meanwhile, the degradation quantity of the device current gain beta(TID) (+) (EMI) tested with combined TID and EMI irradiation was observed to be more severe than that of beta(TID) or beta(EMI) tested only with TID or EMI at low bias V-BE region ( < 0.65 V). However, the degradation trends of the dc characteristics of the tested devices at high V-BE region ( > 0.6 V) became smaller under different experimental conditions (EMI, TID, TID + EMI). Finally, the current gain degradation levels of the tested devices were compared (beta(TID+EMI) > beta(TID) > beta(EMI)). The irradiation effects of neutrons and gamma rays on a commercial type of npn Bipolar Junction Transistors (BJTs) are reported. experiments irradiating bipolar transistors with gamma rays in different bias configurations.
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